Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
نویسندگان
چکیده
in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer T. Niazi, M. Cormier, D. Lucot, L. Largeau, V. Jeudy, 3 J. Cibert, and A. Lemâıtre Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France Laboratoire de Physique des Solides, Université Paris-Sud – CNRS, 91405 Orsay, France Université Cergy-Pontoise, 95000 Cergy-Pontoise, France. Institut Néel, CNRS – Université Joseph Fourier, 38042 Grenoble, France
منابع مشابه
Experimental Study on the Magnetomechanical Characteristics of Ni-Mn-Ga Ferromagnetic Shape Memory Alloy Single Crystals
Magnetic shape memory properties of Ni-Mn-Ga single crystals were characterized by measurement of stress-induced martensite reorientation under constant magnetic fields. Also magnetic field-induced strain as a function of the applied magnetic field under different constant compressive stress levels has been investigated. All the experiments were performed at room temperature in which the sample...
متن کاملThe influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn) (As, P)/GaAs thin films.
The magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn) (As, P) is studied in a material-specific microscopic k ⋅p approach. We calculate the electronic energy band structure of (Ga, Mn) (As, P) quaternary ferromagnetic alloys using a 40-band k ⋅p model and taking into account the s, p-d exchange interaction and the strain of the (Ga, Mn) (As, P) layer on a GaAs substrate. We determ...
متن کاملMapping the magnetic anisotropy in (Ga,Mn)As nanostructures
Anisotropic strain relaxation in Ga,Mn As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurem...
متن کاملMixed magnetic phases in (Ga,Mn)As epilayers.
Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with 100 cubic anisotropy. A change in the magnetic easy axis from [100] ...
متن کاملGiant planar Hall effect in epitaxial (Ga,Mn)as devices.
Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy field...
متن کامل